diff options
| -rw-r--r-- | common/cmd_doc.c | 30 | ||||
| -rw-r--r-- | include/linux/mtd/doc2000.h | 65 |
2 files changed, 91 insertions, 4 deletions
diff --git a/common/cmd_doc.c b/common/cmd_doc.c index 37b7325be..ab3751695 100644 --- a/common/cmd_doc.c +++ b/common/cmd_doc.c @@ -22,11 +22,7 @@ #if (CONFIG_COMMANDS & CFG_CMD_DOC) #include <linux/mtd/nftl.h> -#include <linux/mtd/nand_legacy.h> -#include <linux/mtd/nand_ids.h> - #include <linux/mtd/doc2000.h> -#include <linux/mtd/nftl.h> #ifdef CFG_DOC_SUPPORT_2000 #define DoC_is_2000(doc) (doc->ChipID == DOC_ChipID_Doc2k) @@ -69,6 +65,32 @@ static struct DiskOnChip doc_dev_desc[CFG_MAX_DOC_DEVICE]; /* Current DOC Device */ static int curr_device = -1; +/* Supported NAND flash devices */ +static struct nand_flash_dev nand_flash_ids[] = { + {"Toshiba TC5816BDC", NAND_MFR_TOSHIBA, 0x64, 21, 1, 2, 0x1000, 0}, + {"Toshiba TC5832DC", NAND_MFR_TOSHIBA, 0x6b, 22, 0, 2, 0x2000, 0}, + {"Toshiba TH58V128DC", NAND_MFR_TOSHIBA, 0x73, 24, 0, 2, 0x4000, 0}, + {"Toshiba TC58256FT/DC", NAND_MFR_TOSHIBA, 0x75, 25, 0, 2, 0x4000, 0}, + {"Toshiba TH58512FT", NAND_MFR_TOSHIBA, 0x76, 26, 0, 3, 0x4000, 0}, + {"Toshiba TC58V32DC", NAND_MFR_TOSHIBA, 0xe5, 22, 0, 2, 0x2000, 0}, + {"Toshiba TC58V64AFT/DC", NAND_MFR_TOSHIBA, 0xe6, 23, 0, 2, 0x2000, 0}, + {"Toshiba TC58V16BDC", NAND_MFR_TOSHIBA, 0xea, 21, 1, 2, 0x1000, 0}, + {"Toshiba TH58100FT", NAND_MFR_TOSHIBA, 0x79, 27, 0, 3, 0x4000, 0}, + {"Samsung KM29N16000", NAND_MFR_SAMSUNG, 0x64, 21, 1, 2, 0x1000, 0}, + {"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0x6b, 22, 0, 2, 0x2000, 0}, + {"Samsung KM29U128T", NAND_MFR_SAMSUNG, 0x73, 24, 0, 2, 0x4000, 0}, + {"Samsung KM29U256T", NAND_MFR_SAMSUNG, 0x75, 25, 0, 2, 0x4000, 0}, + {"Samsung unknown 64Mb", NAND_MFR_SAMSUNG, 0x76, 26, 0, 3, 0x4000, 0}, + {"Samsung KM29W32000", NAND_MFR_SAMSUNG, 0xe3, 22, 0, 2, 0x2000, 0}, + {"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0xe5, 22, 0, 2, 0x2000, 0}, + {"Samsung KM29U64000", NAND_MFR_SAMSUNG, 0xe6, 23, 0, 2, 0x2000, 0}, + {"Samsung KM29W16000", NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0}, + {"Samsung K9F5616Q0C", NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1}, + {"Samsung K9K1216Q0C", NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1}, + {"Samsung K9F1G08U0M", NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0}, + {NULL,} +}; + /* ------------------------------------------------------------------------- */ int do_doc (cmd_tbl_t *cmdtp, int flag, int argc, char *argv[]) diff --git a/include/linux/mtd/doc2000.h b/include/linux/mtd/doc2000.h index ebf9a7692..eeb1d7e98 100644 --- a/include/linux/mtd/doc2000.h +++ b/include/linux/mtd/doc2000.h @@ -91,6 +91,13 @@ struct DiskOnChip; #define ADDR_PAGE 2 #define ADDR_COLUMN_PAGE 3 +struct Nand { + char floor, chip; + unsigned long curadr; + unsigned char curmode; + /* Also some erase/write/pipeline info when we get that far */ +}; + struct DiskOnChip { unsigned long physadr; unsigned long virtadr; @@ -148,4 +155,62 @@ void doc_probe(unsigned long physadr); void doc_print(struct DiskOnChip*); +/* + * Standard NAND flash commands + */ +#define NAND_CMD_READ0 0 +#define NAND_CMD_READ1 1 +#define NAND_CMD_PAGEPROG 0x10 +#define NAND_CMD_READOOB 0x50 +#define NAND_CMD_ERASE1 0x60 +#define NAND_CMD_STATUS 0x70 +#define NAND_CMD_SEQIN 0x80 +#define NAND_CMD_READID 0x90 +#define NAND_CMD_ERASE2 0xd0 +#define NAND_CMD_RESET 0xff + +/* + * NAND Flash Manufacturer ID Codes + */ +#define NAND_MFR_TOSHIBA 0x98 +#define NAND_MFR_SAMSUNG 0xec + +/* + * NAND Flash Device ID Structure + * + * Structure overview: + * + * name - Complete name of device + * + * manufacture_id - manufacturer ID code of device. + * + * model_id - model ID code of device. + * + * chipshift - total number of address bits for the device which + * is used to calculate address offsets and the total + * number of bytes the device is capable of. + * + * page256 - denotes if flash device has 256 byte pages or not. + * + * pageadrlen - number of bytes minus one needed to hold the + * complete address into the flash array. Keep in + * mind that when a read or write is done to a + * specific address, the address is input serially + * 8 bits at a time. This structure member is used + * by the read/write routines as a loop index for + * shifting the address out 8 bits at a time. + * + * erasesize - size of an erase block in the flash device. + */ +struct nand_flash_dev { + char * name; + int manufacture_id; + int model_id; + int chipshift; + char page256; + char pageadrlen; + unsigned long erasesize; + int bus16; +}; + #endif /* __MTD_DOC2000_H__ */ |