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authorwdenk <wdenk>2001-04-28 17:59:11 +0000
committerwdenk <wdenk>2001-04-28 17:59:11 +0000
commit4a5b6a356a79123d3fcd780139629213afcedca8 (patch)
treea54c1cec31c73462ba2c04fac3318a0990dd21b1 /board/mbx8xx/dimm.h
parentb631bb9cad6b5553846f508fbfa5ba6362fb0677 (diff)
Initial revision
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diff --git a/board/mbx8xx/dimm.h b/board/mbx8xx/dimm.h
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+#ifndef __dimm_h
+#define __dimm_h
+
+/*
+ * Module name: %M%
+ * Description:
+ * Serial Presence Detect Definitions Module
+ * SCCS identification: %I%
+ * Branch: %B%
+ * Sequence: %S%
+ * Date newest applied delta was created (MM/DD/YY): %G%
+ * Time newest applied delta was created (HH:MM:SS): %U%
+ * SCCS file name %F%
+ * Fully qualified SCCS file name:
+ * %P%
+ * Copyright:
+ * (C) COPYRIGHT MOTOROLA, INC. 1996
+ * ALL RIGHTS RESERVED
+ * Notes:
+ * 1. All data was taken from an IBM application note titled
+ * "Serial Presence Detect Definitions".
+ * History:
+ * Date Who
+ *
+ * 10/24/96 Rob Baxter
+ * Initial release.
+ *
+ */
+
+/*
+ * serial PD byte assignment address map (256 byte EEPROM)
+ */
+typedef struct dimm
+{
+ uchar n_bytes; /* 00 number of bytes written/used */
+ uchar t_bytes; /* 01 total number of bytes in serial PD device */
+ uchar fmt; /* 02 fundamental memory type (FPM/EDO/SDRAM) */
+ uchar n_row; /* 03 number of rows */
+ uchar n_col; /* 04 number of columns */
+ uchar n_banks; /* 05 number of banks */
+ uchar data_w_lo; /* 06 data width */
+ uchar data_w_hi; /* 07 data width */
+ uchar ifl; /* 08 interface levels */
+ uchar a_ras; /* 09 RAS access */
+ uchar a_cas; /* 0A CAS access */
+ uchar ct; /* 0B configuration type (non-parity/parity/ECC) */
+ uchar refresh_rt; /* 0C refresh rate/type */
+ uchar p_dram_o; /* 0D primary DRAM organization */
+ uchar s_dram_o; /* 0E secondary DRAM organization (parity/ECC-checkbits) */
+ uchar reserved[17]; /* 0F reserved fields for future offerings */
+ uchar ss_info[32]; /* 20 superset information (may be used in the future) */
+ uchar m_info[64]; /* 40 manufacturer information (optional) */
+ uchar unused[128]; /* 80 unused storage locations */
+} dimm_t;
+
+/*
+ * memory type definitions
+ */
+#define DIMM_MT_FPM 1 /* standard FPM (fast page mode) DRAM */
+#define DIMM_MT_EDO 2 /* EDO (extended data out) */
+#define DIMM_MT_PN 3 /* pipelined nibble */
+#define DIMM_MT_SDRAM 4 /* SDRAM (synchronous DRAM) */
+
+/*
+ * row addresses definitions
+ */
+#define DIMM_RA_RDNDNT (1<<7) /* redundant addressing */
+#define DIMM_RA_MASK 0x7f /* number of row addresses mask */
+
+/*
+ * module interface levels definitions
+ */
+#define DIMM_IFL_TTL 0 /* TTL/5V tolerant */
+#define DIMM_IFL_LVTTL 1 /* LVTTL (not 5V tolerant) */
+#define DIMM_IFL_HSTL15 2 /* HSTL 1.5 */
+#define DIMM_IFL_SSTL33 3 /* SSTL 3.3 */
+#define DIMM_IFL_SSTL25 4 /* SSTL 2.5 */
+
+/*
+ * DIMM configuration type definitions
+ */
+#define DIMM_CT_NONE 0 /* none */
+#define DIMM_CT_PARITY 1 /* parity */
+#define DIMM_CT_ECC 2 /* ECC */
+
+/*
+ * row addresses definitions
+ */
+#define DIMM_RRT_SR (1<<7) /* self refresh flag */
+#define DIMM_RRT_MASK 0x7f /* refresh rate mask */
+#define DIMM_RRT_NRML 0x00 /* normal (15.625us) */
+#define DIMM_RRT_R_3_9 0x01 /* reduced .25x (3.9us) */
+#define DIMM_RRT_R_7_8 0x02 /* reduced .5x (7.8us) */
+#define DIMM_RRT_E_31_3 0x03 /* extended 2x (31.3us) */
+#define DIMM_RRT_E_62_5 0x04 /* extended 4x (62.5us) */
+#define DIMM_RRT_E_125 0x05 /* extended 8x (125us) */
+
+#endif /* __dimm_h */