/* NOR flash devices */ #include "memory.h" typedef struct pflash_t pflash_t; /* pflash_cfi01.c */ pflash_t *pflash_cfi01_register(target_phys_addr_t base, DeviceState *qdev, const char *name, target_phys_addr_t size, BlockDriverState *bs, uint32_t sector_len, int nb_blocs, int width, uint16_t id0, uint16_t id1, uint16_t id2, uint16_t id3, int be); /* pflash_cfi02.c */ pflash_t *pflash_cfi02_register(target_phys_addr_t base, DeviceState *qdev, const char *name, target_phys_addr_t size, BlockDriverState *bs, uint32_t sector_len, int nb_blocs, int nb_mappings, int width, uint16_t id0, uint16_t id1, uint16_t id2, uint16_t id3, uint16_t unlock_addr0, uint16_t unlock_addr1, int be); MemoryRegion *pflash_cfi01_get_memory(pflash_t *fl); /* nand.c */ DeviceState *nand_init(BlockDriverState *bdrv, int manf_id, int chip_id); void nand_setpins(DeviceState *dev, uint8_t cle, uint8_t ale, uint8_t ce, uint8_t wp, uint8_t gnd); void nand_getpins(DeviceState *dev, int *rb); void nand_setio(DeviceState *dev, uint32_t value); uint32_t nand_getio(DeviceState *dev); uint32_t nand_getbuswidth(DeviceState *dev); #define NAND_MFR_TOSHIBA 0x98 #define NAND_MFR_SAMSUNG 0xec #define NAND_MFR_FUJITSU 0x04 #define NAND_MFR_NATIONAL 0x8f #define NAND_MFR_RENESAS 0x07 #define NAND_MFR_STMICRO 0x20 #define NAND_MFR_HYNIX 0xad #define NAND_MFR_MICRON 0x2c /* onenand.c */ void *onenand_raw_otp(DeviceState *onenand_device); /* ecc.c */ typedef struct { uint8_t cp; /* Column parity */ uint16_t lp[2]; /* Line parity */ uint16_t count; } ECCState; uint8_t ecc_digest(ECCState *s, uint8_t sample); void ecc_reset(ECCState *s); extern VMStateDescription vmstate_ecc_state;